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Free, publicly-accessible full text available January 7, 2026
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null (Ed.)A 3D cube antenna for CMOS communication ICs is proposed in this paper. The antenna is fabricated on the surface of a cube for the interior CMOS chip placement. The antenna system consists of a meandered line antenna plated gold on three silicon planes of the cube and a balun on one plane. Three planes are then connected and folded by gold, and fixed in a plastic carrier. This antenna is designed for X-band receivers (8-12 GHz) and its measured peak gain is -1.38 dBi with 7% -10 dB reflection coefficient at 10.35 GHz. The antenna cube interior size is 3 mm×3 mm×3 mm, of which the cubic shape allows for CMOS IC packaging inside the cube’s hollow interior.more » « less
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An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogeneously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new process improves device yield and reliability compared to previous implementations.more » « less
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